Category: Journal Paper

“Efficiency cliff in scaling InGaN light-emitting diodes down to submicron”, Appl. Phys. Lett. 126, 242101 (2025)

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“Efficiency Droop Contributors in InGaN Green Light Emitting Diodes”, Appl. Phys. Lett., 126, 211103, (2025)

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-Semiconductor Today

“High Field Transport in (Ultra) Wide Bandgap Semiconductors: Diamond Versus Cubic GaN,” IEEE Trans. Electron Devices 71(9), 5638–5644 (2024).

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“Buried Channel Diamond Photoconductive Switch with High Above-Bandgap Responsivity,” IEEE Electron Device Lett. 45 (6) 1044 (2024).

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– TOP Downloaded Article

“Green-emitting Cubic GaN/In_0.16Ga_0.84N/GaN Quantum Well with 32% Internal Quantum Efficiency at Room Temperature,” Appl. Phys. Lett. 124, 011101 (2024).

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– FRONT COVER ARTICLE

“Diamond p-type lateral Schottky barrier diodes with high breakdown voltage (4612 V at 0.01 mA/mm),” IEEE Electron Device Lett. 44 (10) 1692 (2023).

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– IEEE Spectrum Magazine

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– TOP Downloaded Article (six months in a row, Sept. 2023 till Feb. 2024)

“Design trade-offs between traditional hexagonal and emerging cubic In_XGa_(1-X)N/GaN-based green light-emitting diodes,” J. Opt. Soc. Am. B 40(5), 1017-1023 (2023).

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“Low Temperature Absolute Internal Quantum Efficiency of InGaN-based Light-Emitting Diodes,” Appl. Phys. Lett. 122, 091101 (2023).

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“Structural and Optical Properties of Cubic GaN on U-grooved Si (100),” Appl. Phys. Lett. 121, 032101 (2022).

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– Semiconductor Today