“Design trade-offs between traditional hexagonal and emerging cubic InXGa(1-X)N/GaN-based green light-emitting diodes,” Journal of the Optical Society of America B (IN-PRESS, 2023).

“Low Temperature Absolute Internal Quantum Efficiency of InGaN-based Light-Emitting Diodes,” Appl. Phys. Lett. 122, 091101 (2023).

“Structural and Optical Properties of Cubic GaN on U-grooved Si (100),” Appl. Phys. Lett. 121, 032101 (2022). Select Highlights by – Editor’s Pick – Compound Semiconductor – Semiconductor Today

“Interplay between Auger recombination, Carrier Leakage, and Polarization in InGaAlN Multiple-Quantum-Well Light-Emitting Diodes,” J. Appl. Phys. 131, 193102 (2022). Select Highlights by – Compound Semiconductor – Semiconductor Today – HMNTL – Grainger College of Engineering

“Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes,” IEEE Trans. Electron Devices 69(6), 3240-3245 (2022). Select Highlights by – Compound Semiconductor – Semiconductor Today

“Effect of Auger Electron–Hole Asymmetry on the Efficiency Droop in InGaN Quantum Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 58 (1), 1-9 (2022). Select Highlights by – Physics.org – Compound Semiconductor – LED Inside – Semiconductor Today

“Mitigate Self-Compensation with High Crystal Symmetry: A First–Principles Study of Formation and Activation of Impurities in GaN,” Comp. Mater. Sci. 190, 110283 (2021). Select Highlights by – Compound Semiconductor

“Systematic Study of Shockley-Read-Hall and Radiative Recombination in GaN on Al2O3, Freestanding GaN, and GaN on Si,” J. Phys. Photonics 2, 035003 (2020).

“Cp2Mg-Induced Transition Metal Ion Contamination and Performance Loss in MOCVD-Grown Blue Emitting InGaN/GaN Multiple Quantum Wells,” Appl. Phys. Lett. 116, 192106 (2020).

“Phonon-assisted reduction of hot spot temperature in AlInN ternaries,” J. Phys. D-Appl. Phys. 53, 365102 (2020).