“Interplay between Auger recombination, Carrier Leakage, and Polarization in InGaAlN Multiple-Quantum-Well Light-Emitting Diodes,” J. Appl. Phys. 131, 193102 (2022).

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“Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes,” IEEE Trans. Electron Devices 69(6), 3240-3245 (2022).

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“Effect of Auger Electron–Hole Asymmetry on the Efficiency Droop in InGaN Quantum Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 58 (1), 1-9 (2022).

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“Mitigate Self-Compensation with High Crystal Symmetry: A First–Principles Study of Formation and Activation of Impurities in GaN,” Comp. Mater. Sci. 190, 110283 (2021).

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“Systematic Study of Shockley-Read-Hall and Radiative Recombination in GaN on Al₂O₃, Freestanding GaN, and GaN on Si,” J. Phys. Photonics 2, 035003 (2020).

“Cp₂Mg-Induced Transition Metal Ion Contamination and Performance Loss in MOCVD-Grown Blue Emitting InGaN/GaN Multiple Quantum Wells,” Appl. Phys. Lett. 116, 192106 (2020).

“Phonon-assisted reduction of hot spot temperature in AlInN ternaries,” J. Phys. D-Appl. Phys. 53, 365102 (2020).

“Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing,” IEEE Trans. Electron Devices 67 (7), 2760 (2020).

“Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density–Functional Theory,”  ACS Omega 5, 3917 – 3913 (2020).