“Mitigate Self-Compensation with High Crystal Symmetry: A First–Principles Study of Formation and Activation of Impurities in GaN,” Comp. Mater. Sci. 190, 110283 (2021).

Select Highlights by

– Compound Semiconductor

“Systematic Study of Shockley-Read-Hall and Radiative Recombination in GaN on Al₂O₃, Freestanding GaN, and GaN on Si,” J. Phys. Photonics 2, 035003 (2020).

“Cp₂Mg-Induced Transition Metal Ion Contamination and Performance Loss in MOCVD-Grown Blue Emitting InGaN/GaN Multiple Quantum Wells,” Appl. Phys. Lett. 116, 192106 (2020).

“Phonon-assisted reduction of hot spot temperature in AlInN ternaries,” J. Phys. D-Appl. Phys. 53, 365102 (2020).

“Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing,” IEEE Trans. Electron Devices 67 (7), 2760 (2020).

“Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density–Functional Theory,”  ACS Omega 5, 3917 – 3913 (2020).

“Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance,” J. Appl. Phys. 126, 185103 (2019).

Select Highlights by

– Illinois New Bureau

– WCIA

– EurekAlert

– Phys.org

– Bioengineer.org

– Compound Semiconductor

– Semiconductor Today

– Semiconductor Today 14 (9) p23, Nov./Dec. 2019

“Investigation of annealed, thin(~ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies,” Mater. Res. Express 6, 105904 (2019).