“Green-emitting Cubic GaN/In0.16Ga0.84N/GaN Quantum Well with 32% Internal Quantum Efficiency at Room Temperature,” Appl. Phys. Lett. (in-press, 2023).

“Diamond p-type lateral Schottky barrier diodes with high breakdown voltage (4612 V at 0.01 mA/mm),” IEEE Electron Device Lett. 44 (10) 1692 (2023). Select Highlights by – UIUC – Compound Semiconductor

“Design trade-offs between traditional hexagonal and emerging cubic InXGa(1-X)N/GaN-based green light-emitting diodes,” J. Opt. Soc. Am. B 40(5), 1017-1023 (2023). Select Highlights by – Editor’s Pick

“Low Temperature Absolute Internal Quantum Efficiency of InGaN-based Light-Emitting Diodes,” Appl. Phys. Lett. 122, 091101 (2023). Select Highlights by – UIUC – Semiconductor Today – Compound Semiconductor

“Structural and Optical Properties of Cubic GaN on U-grooved Si (100),” Appl. Phys. Lett. 121, 032101 (2022). Select Highlights by – Editor’s Pick – Compound Semiconductor – Semiconductor Today

“Interplay between Auger recombination, Carrier Leakage, and Polarization in InGaAlN Multiple-Quantum-Well Light-Emitting Diodes,” J. Appl. Phys. 131, 193102 (2022). Select Highlights by – Compound Semiconductor – Semiconductor Today – HMNTL – Grainger College of Engineering

“Quenching of the Efficiency Droop in Cubic Phase InGaAlN Light-Emitting Diodes,” IEEE Trans. Electron Devices 69(6), 3240-3245 (2022). Select Highlights by – Compound Semiconductor – Semiconductor Today

“Effect of Auger Electron–Hole Asymmetry on the Efficiency Droop in InGaN Quantum Well Light-Emitting Diodes,” IEEE J. Quantum Electron. 58 (1), 1-9 (2022). Select Highlights by – Physics.org – Compound Semiconductor – LED Inside – Semiconductor Today

“Mitigate Self-Compensation with High Crystal Symmetry: A First–Principles Study of Formation and Activation of Impurities in GaN,” Comp. Mater. Sci. 190, 110283 (2021). Select Highlights by – Compound Semiconductor

“Systematic Study of Shockley-Read-Hall and Radiative Recombination in GaN on Al2O3, Freestanding GaN, and GaN on Si,” J. Phys. Photonics 2, 035003 (2020).