News
Hubert receives the Nick and Katherine Holonyak, Jr. Graduate Student Award
US patent issued
“Large area synthesis of cubic phase gallium nitride on silicon,” U.S. Patent 12,610,762 (issued April 21, 2026).
Keith selected as a 2026 NDSEG Fellow
Jason selected as a 2026 NSF Fellow
Journal paper published
“Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)”, Appl. Phys. Lett. 128, 123301 (2026) Selected Highlights by – Compound Semiconductor
Jason awarded a IEEE Electron Devices Society Undergraduate Student Scholarship
Jason is selected as the IEEE Region 3 recipient of the 2025 IEEE Electron Devices Society Undergraduate Student Scholarship. The Fellowship Program was established to promote, recognize, and support Undergraduate level study and hands-on experience within the Electron Devices Society’s field of interest. The fellowship consists of a plaque and a check for US $1,000.00 […]
Vertical Semiconductor (co-founded by our alumnus Dr. Josh Perozek) raises $11M in seed funding round to deliver high-voltage and high-efficiency power electronics with a scalable, manufacturable solution
US patent issued
“Large area synthesis of cubic phase gallium nitride on silicon,” U.S. Patent 12,412,751 (issued September 9, 2025).
Prof. Bayram awarded a GaN Prototype Accelerator Multi-Project Wafer Opportunity
for project titled “A High-Performance Gallium Nitride MMIC Solution for Next-Generation Automotive Radar Systems”.