“Mitigate Self-Compensation with High Crystal Symmetry: A First–Principles Study of Formation and Activation of Impurities in GaN,” Comp. Mater. Sci. 190, 110283 (2021). Select Highlights by – Compound Semiconductor
Category: Journal Paper
Journal paper published
“Systematic Study of Shockley-Read-Hall and Radiative Recombination in GaN on Al2O3, Freestanding GaN, and GaN on Si,” J. Phys. Photonics 2, 035003 (2020).
Journal paper published
“Cp2Mg-Induced Transition Metal Ion Contamination and Performance Loss in MOCVD-Grown Blue Emitting InGaN/GaN Multiple Quantum Wells,” Appl. Phys. Lett. 116, 192106 (2020).
Journal paper published
“Phonon-assisted reduction of hot spot temperature in AlInN ternaries,” J. Phys. D-Appl. Phys. 53, 365102 (2020).
Journal paper published
“Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing,” IEEE Trans. Electron Devices 67 (7), 2760 (2020).
Journal paper highlighted as the Front Cover
ACS Omega selected our work (ACS Omega 5, 3917 – 3923 (2020) as the issue Front Cover. The cover art illustrates the crystal structure and band alignments of zincblende AlN/GaN/InN heterostructures. The innovative zincblende III-nitrides material system featuring type-I band alignment and polarization-free nature is beneficial to capture both electrons and holes for recombination and […]
Journal paper published
“Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density–Functional Theory,” ACS Omega 5, 3917 – 3913 (2020).
Journal paper published
“Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance,” J. Appl. Phys. 126, 185103 (2019). Select Highlights by – Illinois New Bureau – WCIA – EurekAlert – Phys.org – Bioengineer.org – Compound Semiconductor – Semiconductor Today – Semiconductor Today 14 (9) p23, Nov./Dec. 2019
Journal paper published
“Investigation of annealed, thin(~ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies,” Mater. Res. Express 6, 105904 (2019).