“Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing,” IEEE Trans. Electron Devices 67 (7), 2760 (2020).

“Band Alignments of Ternary Wurtzite and Zincblende III-Nitrides Investigated by Hybrid Density–Functional Theory,”  ACS Omega 5, 3917 – 3913 (2020).

“Impact of dislocations on the thermal conductivity of gallium nitride studied by time-domain thermoreflectance,” J. Appl. Phys. 126, 185103 (2019). Select Highlights by – Illinois New Bureau – WCIA – EurekAlert – Phys.org – Bioengineer.org – Compound Semiconductor – Semiconductor Today – Semiconductor Today 14 (9) p23, Nov./Dec. 2019

“Investigation of annealed, thin(~ 2.6 nm)-Al2O3/AlGaN/GaN metal-insulator-semiconductor heterostructures on Si(111) via capacitance-voltage and current-voltage studies,” Mater. Res. Express 6, 105904 (2019).

“Structural and Electronic Properties of Hexagonal and Cubic Phase AlGaInN Alloys Investigated Using First Principles Calculations,” Sci. Rep. 9:6583 (2019).

“Confined and Interface Optical Phonon Emission in GaN/InGaN Double Barrier Quantum Well Heterostructures,” PLoS One 14(4): e0214971 (2019).

“Comparison of Structural and Optical Properties of Blue Emitting In0.15Ga0.85N/GaN Multi-Quantum-Well Layers Grown on Sapphire and Silicon Substrates,” AIP Advances 9, 025306 (2019)