@ILLINOIS, 2 PATENTS
| Result # | Document/Patent number | Title | Publication date | Pages | ||
|---|---|---|---|---|---|---|
| 1 | US-10211328-B2 | Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer | 2019-02-19 | 30 | ||
| 2 | US-10027086-B2 | Maximizing cubic phase group III-nitride on patterned silicon | 2018-07-17 | 20 |
@IBM, 46 PATENTS
| Result # | Document/Patent number | Title | Publication date | Pages | ||
|---|---|---|---|---|---|---|
| 1 | US-10957816-B2 | Thin film wafer transfer and structure for electronic devices | 2021-03-23 | 17 | ||
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| 3 | US-10056251-B2 | Hetero-integration of III-N material on silicon | 2018-08-21 | 9 | ||
| 4 | US-9865769-B2 | Back contact LED through spalling | 2018-01-09 | 11 | ||
| 5 | US-9660069-B2 | Group III nitride integration with CMOS technology | 2017-05-23 | 31 | ||
| 6 | US-20170092483-A1 | HETERO-INTEGRATION OF III-N MATERIAL ON SILICON | 2017-03-30 | 8 | ||
| 7 | US-9608160-B1 | Polarization free gallium nitride-based photonic devices on nanopatterned silicon | 2017-03-28 | 13 | ||
| 8 | US-9601583-B2 | Hetero-integration of III-N material on silicon | 2017-03-21 | 8 | ||
| 9 | US-9574287-B2 | Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same | 2017-02-21 | 18 | ||
| 10 | US-9564526-B2 | Group III nitride integration with CMOS technology | 2017-02-07 | 31 | ||
| 11 | US-20160284832-A1 | 2016-09-29 | 30 | |||
| 12 | US-20160284930-A1 | BACK CONTACT LED THROUGH SPALLING | 2016-09-29 | 10 | ||
| 13 | US-20160233244-A1 | GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY | 2016-08-11 | 30 | ||
| 14 | US-9391144-B2 | Selective gallium nitride regrowth on (100) silicon | 2016-07-12 | 19 | ||
| 15 | US-9362281-B2 | Group III nitride integration with CMOS technology | 2016-06-07 | 31 | ||
| 16 | US-9331076-B2 | Group III nitride integration with CMOS technology | 2016-05-03 | 31 | ||
| 17 | US-9245747-B2 | Engineered base substrates for releasing III-V epitaxy through spalling | 2016-01-26 | 13 | ||
| 18 | US-20160020283-A1 | HETERO-INTEGRATION OF III-N MATERIAL ON SILICON | 2016-01-21 | 9 | ||
| 19 | US-9236251-B2 | Heterogeneous integration of group III nitride on silicon for advanced integrated circuits | 2016-01-12 | 19 | ||
| 20 | US-9236271-B2 | Laser-initiated exfoliation of group III-nitride films and applications for layer transfer and patterning | 2016-01-12 | 19 | ||
| 21 | US-20150318168-A1 | ENGINEERED BASE SUBSTRATES FOR RELEASING III-V EPITAXY THROUGH SPALLING | 2015-11-05 | 13 | ||
| 22 | US-20150318276-A1 | GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY | 2015-11-05 | 30 | ||
| 23 | US-20150318283-A1 | GROUP III NITRIDE INTEGRATION WITH CMOS TECHNOLOGY | 2015-11-05 | 30 | ||
| 24 | US-20150287790-A1 | SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON | 2015-10-08 | 18 | ||
| 25 | US-20150235838-A1 | HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVANCED INTEGRATED CIRCUITS | 2015-08-20 | 18 | ||
| 26 | US-9099381-B2 | Selective gallium nitride regrowth on (100) silicon | 2015-08-04 | 19 | ||
| 27 | US-20150179428-A1 | CONTROLLED SPALLING OF GROUP III NITRIDES CONTAINING AN EMBEDDED SPALL RELEASING PLANE | 2015-06-25 | 14 | ||
| 28 | US-9059075-B2 | Selective gallium nitride regrowth on (100) silicon | 2015-06-16 | 19 | ||
| 29 | US-9058990-B1 | Controlled spalling of group III nitrides containing an embedded spall releasing plane | 2015-06-16 | 15 | ||
| 30 | US-9059339-B1 | Light emitting diodes with via contact scheme | 2015-06-16 | 16 | ||
| 31 | US-9053930-B2 | Heterogeneous integration of group III nitride on silicon for advanced integrated circuits | 2015-06-09 | 18 | ||
| 32 | US-9048173-B2 | Dual phase gallium nitride material formation on (100) silicon | 2015-06-02 | 19 | ||
| 33 | US-20150083036-A1 | GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME | 2015-03-26 | 17 | ||
| 34 | US-20150084074-A1 | GALLIUM NITRIDE MATERIAL AND DEVICE DEPOSITION ON GRAPHENE TERMINATED WAFER AND METHOD OF FORMING THE SAME | 2015-03-26 | 16 | ||
| 35 | US-20150035123-A1 | CURVATURE COMPENSATED SUBSTRATE AND METHOD OF FORMING SAME | 2015-02-05 | 10 | ||
| 36 | US-8927398-B2 | Group III nitrides on nanopatterned substrates | 2015-01-06 | 14 | ||
| 37 | US-8916451-B2 | Thin film wafer transfer and structure for electronic devices | 2014-12-23 | 17 | ||
| 38 | US-20140217356-A1 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES | 2014-08-07 | 16 | ||
| 39 | US-20140220764-A1 | THIN FILM WAFER TRANSFER AND STRUCTURE FOR ELECTRONIC DEVICES | 2014-08-07 | 16 | ||
| 40 | US-20140191283-A1 | GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES | 2014-07-10 | 15 | ||
| 41 | US-20140191284-A1 | GROUP III NITRIDES ON NANOPATTERNED SUBSTRATES | 2014-07-10 | 11 | ||
| 42 | US-20140131722-A1 | DUAL PHASE GALLIUM NITRIDE MATERIAL FORMATION ON (100) SILICON | 2014-05-15 | 19 | ||
| 43 | US-20140131724-A1 | SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON | 2014-05-15 | 18 | ||
| 44 | US-20140134830-A1 | SELECTIVE GALLIUM NITRIDE REGROWTH ON (100) SILICON | 2014-05-15 | 19 | ||
| 45 | US-20130280885-A1 | LASER-INITIATED EXFOLIATION OF GROUP III-NITRIDE FILMS AND APPLICATIONS FOR LAYER TRANSFER AND PATTERNING | 2013-10-24 | 19 | ||
| 46 | US-20130270608-A1 | HETEROGENEOUS INTEGRATION OF GROUP III NITRIDE ON SILICON FOR ADVANCED INTEGRATED CIRCUITS | 2013-10-17 | 19 |