Patents

(24)

C. Bayram, J. O. Chu, C. Dimitrakopoulos, J. Kim, H. Park, and D.K. Sadana,

Thin film wafer transfer and structure for electronic devices,”

U.S. Patent 10,957,816 (issued March 23, 2021). link or pdf

(23)

C. Bayram, R.W. Grady, and K. Park,

Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer,”

U.S. Patent 10,211,328 (issued February 19, 2019). link or pdf

(22)

C. Bayram, C.P. D’Emic, J. Kim, and D.K. Sadana,

Hetero-integration of III-N material on silicon,”

U.S. Patent 10,056,251 (issued August 21, 2018). link or pdf

(21)

C. Bayram and R. Liu,

Maximizing cubic phase group III-nitride on patterned silicon,”

U.S. Patent 10,027,086 (issued July 17, 2018). link or pdf

(20)

C. Bayram, S. W. Bedell, N. Li, K.T. Shiu, and D. K. Sadana,

Back contact LED through spalling,”

U.S. Patent 9,865,769 (issued January 9, 2018). link or pdf

(19)

C. Bayram, C.P. D’Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana,

Group III nitride integration with CMOS technology,”

U.S. Patent 9,660,069 (issued May 23, 2017). link or pdf

(18)

C. Bayram, C.-W. Cheng, T. Gokmen, N. Li, J.A. Ott, K.T. Shiu, and D.K. Sadana, ,

Polarization free gallium nitride-based photonic devices on nanopatterned silicon,”

U.S. Patent 9,608,160 (issued March 28, 2017). link or pdf

(17)

C. Bayram, C.P. D’Emic, J. Kim, and D.K. Sadana,

Hetero-integration of III-N material on silicon,”

U.S. Patent 9,601,583 (issued March 21, 2017). link or pdf

 

(16)

C. Bayram, C. Dimitrakopoulos, K. Fogel, J. Kim, J.A. Ott, and D.K. Sadana,

Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same,”

U.S. Patent 9,574,287 (issued February 21, 2017). link or pdf

(15)

C. Bayram, C.P. D’Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana,

Group III nitride integration with CMOS technology,”

U.S. Patent 9,564,526 (issued February 7, 2017). link or pdf

(14)

C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu,

Selective gallium nitride regrowth on (100) silicon,”

U.S. Patent 9,391,144 (issued July 12, 2016). link or pdf

(13)

C. Bayram, C.P. D’Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana,

Group III nitride integration with CMOS technology,”

U.S. Patent 9,362,281 (issued June 7, 2016). link or pdf

(12)

C. Bayram, C.P. D’Emic, W.J. Gallagher, E. Leobandung, and D.K. Sadana,

Group III nitride integration with CMOS technology,”

U.S. Patent 9,331,076 (issued May 3, 2016). link or pdf

(11)

C. Bayram, S. W. Bedell, and D. K. Sadana,

Engineered base substrates for releasing III-V epitaxy through spalling,”

U.S. Patent 9,245,747 (issued January 26, 2016). link or pdf

(10)

C. Bayram, S. W. Bedell, D. K. Sadana, and K. L. Saenger,

Laser-initiated exfoliation of group iii-nitride films and applications for layer transfer and patterning,”

U.S. Patent 9,236,271 (issued January 12, 2016). link or pdf

(9)

C. Bayram, C.-W. Cheng, T. H. Ning, D.K. Sadana, and K.-T. Shiu,

Heterogeneous integration of group III nitride on silicon for advanced integrated circuits ,”

U.S. Patent 9,236,251 (issued January 12, 2016). link or pdf

(8)

C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu,

Selective gallium nitride regrowth on (100) silicon,”

U.S. Patent 9,099,381 (issued August 4, 2015). link or pdf

(7)

C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu,

Selective gallium nitride regrowth on (100) silicon ,”

U.S. Patent 9,059,075 (issued June 16, 2015). link or pdf

 

(6)

C. Bayram and D.K. Sadana,

Light emitting diodes with via contact scheme ,”

U.S. Patent 9,059,339 (issued June 16, 2015). link or pdf

(5)

C. Bayram, S.W. Bedell, K.E. Fogel, J. A. Ott, and D.K. Sadana,

Controlled spalling of group III nitrides containing an embedded spall releasing plane ,”

U.S. Patent 9,058,990 (issued June 16, 2015). link or pdf

(4)

C. Bayram, C.-W. Cheng, T. H. Ning, D.K. Sadana, and K.-T. Shiu,

Heterogeneous integration of group III nitride on silicon for advanced integrated circuits ,”

U.S. Patent 9,053,930 (issued June 9, 2015). link or pdf

(3)

C. Bayram, C.-W. Cheng, D.K. Sadana, and K.-T. Shiu,

Dual phase gallium nitride material formation on (100) silicon ,”

U.S. Patent 9,048,173 (issued June 2, 2015). link or pdf

(2)

C. Bayram, D.K. Sadana, and K.-T. Shiu,

Group III nitrides on nanopatterned substrates,”

U.S. Patent 8,927,398 (issued January 6, 2015). link or pdf

(1)

C. Bayram, J. O. Chu, C. Dimitrakopoulos, J. Kim, H. Park, and D.K. Sadana,

Thin film wafer transfer and structure for electronic devices,”

U.S. Patent 8,916,451 (issued December 23, 2014). link or pdf