“Low Temperature Absolute Internal Quantum Efficiency of InGaN-based Light-Emitting Diodes,” Appl. Phys. Lett. 122, 091101 (2023).
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“Low Temperature Absolute Internal Quantum Efficiency of InGaN-based Light-Emitting Diodes,” Appl. Phys. Lett. 122, 091101 (2023).
Select Highlights by
– UIUC