Category: Uncategorized
US patent issued
“Large area synthesis of cubic phase gallium nitride on silicon,” U.S. Patent 12,610,762 (issued April 21, 2026).
Keith selected as a 2026 NDSEG Fellow
Jason selected as a 2026 NSF Fellow
Journal paper published
“Ultrafast vertical photoconductive intrinsic diamond switch with high current (17.1 A at 1 kV)”, Appl. Phys. Lett. 128, 123301 (2026) Selected Highlights by – Compound Semiconductor
Jason awarded a IEEE Electron Devices Society Undergraduate Student Scholarship
Jason is selected as the IEEE Region 3 recipient of the 2025 IEEE Electron Devices Society Undergraduate Student Scholarship. The Fellowship Program was established to promote, recognize, and support Undergraduate level study and hands-on experience within the Electron Devices Society’s field of interest. The fellowship consists of a plaque and a check for US $1,000.00 […]
US patent issued
“Large area synthesis of cubic phase gallium nitride on silicon,” U.S. Patent 12,412,751 (issued September 9, 2025).
Prof. Bayram awarded a GaN Prototype Accelerator Multi-Project Wafer Opportunity
for project titled “A High-Performance Gallium Nitride MMIC Solution for Next-Generation Automotive Radar Systems”.
Journal paper published
“Efficiency cliff in scaling InGaN light-emitting diodes down to submicron”, Appl. Phys. Lett. 126, 242101 (2025) Selected Highlights by – Compound Semiconductor
Journal paper published
“Efficiency Droop Contributors in InGaN Green Light Emitting Diodes”, Appl. Phys. Lett., 126, 211103, (2025) Selected Highlights by -Semiconductor Today