“Heterogeneous Integration of GaN Devices on a 200 mm Si(100) Wafer via Scalable CMOS Technology,” IEEE Electron Device Lett. 38 (8), 1094 – 1096 (2017) Select Highlights by – Semiconductor Today
Author: fleming7@illinois.edu
Journal paper published
“Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model,” J. Appl. Phys. 121, 245109 (2017)
Journal paper published
“Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation,” J. Phys. D-Appl. Phys. 50, 265104 (2017)
US patent issued
“Group III nitride integration with CMOS technology,” U.S. Patent 9,660,069, issued May 23, 2017
Congratulations to ICORLAB’s new graduates!
Congratulations to our graduates: Josh, Ryan, Estelle, and Taiming. Best of Luck to You All in Your Future Endeavours !
Yifan selected as the Earl J. Eckel Scholar
Hsuan-Ping awarded a Graduate College Conference Travel Grant
Dicky selected as a NASA Space Technology Research Fellow
Select Highlights by – ECE Department – NASA
Dennis selected as a Goldwater Scholar
Select Highlights by – ECE Department
US patent issued
“Polarization free gallium nitride-based photonic devices on nanopatterned silicon,” U.S. Patent 9,608,160, issued March 28, 2017