“Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer,” U.S. Patent 10,211,328 (issued February 19, 2019). Select Highlights by – University of Illinois ECE Department

“Hetero-integration of III-N material on silicon,” U.S. Patent 10,056,251, issued August 21, 2018

“Maximizing cubic phase group III-nitride on patterned silicon,” U.S. Patent 10,027,086, issued July 17, 2018

“Back contact LED through spalling,” U.S. Patent 9,865,769, issued January 9, 2018

“Group III nitride integration with CMOS technology,” U.S. Patent 9,660,069, issued May 23, 2017

“Polarization free gallium nitride-based photonic devices on nanopatterned silicon,” U.S. Patent 9,608,160, issued March 28, 2017

“Hetero-integration of III-N material on silicon,” U.S. Patent 9,601,583, issued March 21, 2017

“Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same,” U.S. Patent 9,574,287, issued February 21, 2017

“Group III nitride integration with CMOS technology,” U.S. Patent 9,564,526, issued February 7, 2017

“Selective gallium nitride regrowth on (100) silicon,” U.S. Patent 9,391,144, issued July 12, 2016