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Research Professor Can Bayram
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Category: Patent

US patent issued

Posted on February 19, 2019September 23, 2019 by Can Bayram

“Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer,” U.S. Patent 10,211,328 (issued February 19, 2019). Select Highlights by – University of Illinois ECE Department

Posted in Patent, Uncategorized

US patent issued

Posted on October 25, 2018December 15, 2018 by Can Bayram

“Hetero-integration of III-N material on silicon,” U.S. Patent 10,056,251, issued August 21, 2018

Posted in Patent, Uncategorized

US patent issued

Posted on July 21, 2018December 15, 2018 by Can Bayram

“Maximizing cubic phase group III-nitride on patterned silicon,” U.S. Patent 10,027,086, issued July 17, 2018

Posted in Patent, Uncategorized

US patent issued

Posted on January 9, 2018December 15, 2018 by fleming7@illinois.edu

“Back contact LED through spalling,” U.S. Patent 9,865,769, issued January 9, 2018

Posted in Patent, Uncategorized

US patent issued

Posted on May 23, 2017December 15, 2018 by fleming7@illinois.edu

“Group III nitride integration with CMOS technology,” U.S. Patent 9,660,069, issued May 23, 2017

Posted in Patent, Uncategorized

US patent issued

Posted on March 28, 2017December 15, 2018 by fleming7@illinois.edu

“Polarization free gallium nitride-based photonic devices on nanopatterned silicon,” U.S. Patent 9,608,160, issued March 28, 2017

Posted in Patent, Uncategorized

US patent issued

Posted on March 21, 2017December 15, 2018 by fleming7@illinois.edu

“Hetero-integration of III-N material on silicon,” U.S. Patent 9,601,583, issued March 21, 2017

Posted in Patent, Uncategorized

US patent issued

Posted on February 21, 2017December 15, 2018 by fleming7@illinois.edu

“Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same,” U.S. Patent 9,574,287, issued February 21, 2017

Posted in Patent, Uncategorized

US patent issued

Posted on February 7, 2017December 15, 2018 by fleming7@illinois.edu

“Group III nitride integration with CMOS technology,” U.S. Patent 9,564,526, issued February 7, 2017

Posted in Patent, Uncategorized

US patent issued

Posted on July 12, 2016December 16, 2018 by fleming7@illinois.edu

“Selective gallium nitride regrowth on (100) silicon,” U.S. Patent 9,391,144, issued July 12, 2016

Posted in Patent, Uncategorized

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