“Large area synthesis of cubic phase gallium nitride on silicon,” U.S. Patent 12,610,762 (issued April 21, 2026).
US patent issued
Category: Patent
US patent issued
“Large area synthesis of cubic phase gallium nitride on silicon,” U.S. Patent 12,412,751 (issued September 9, 2025).
US patent issued
“Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer,” U.S. Patent 10,211,328 (issued February 19, 2019).
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US patent issued
“Hetero-integration of III-N material on silicon,” U.S. Patent 10,056,251, issued August 21, 2018
US patent issued
“Maximizing cubic phase group III-nitride on patterned silicon,” U.S. Patent 10,027,086, issued July 17, 2018
US patent issued
“Back contact LED through spalling,” U.S. Patent 9,865,769, issued January 9, 2018
US patent issued
“Group III nitride integration with CMOS technology,” U.S. Patent 9,660,069, issued May 23, 2017
US patent issued
“Polarization free gallium nitride-based photonic devices on nanopatterned silicon,” U.S. Patent 9,608,160, issued March 28, 2017
US patent issued
“Hetero-integration of III-N material on silicon,” U.S. Patent 9,601,583, issued March 21, 2017
US patent issued
“Gallium nitride material and device deposition on graphene terminated wafer and method of forming the same,” U.S. Patent 9,574,287, issued February 21, 2017
