ICORLAB

Research Professor Can Bayram
  • Professor Can Bayram
  • Research Team
  • Alumni
Publications
  • Journal Papers
  • Patents
  • Chapters and Books
  • Conference Papers
Teaching News
  • Awards and Recognitions
  • Research News and Publicity

US patent issued

Posted on February 19, 2019September 23, 2019 by Can Bayram

“Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer,” U.S. Patent 10,211,328 (issued February 19, 2019).

Select Highlights by

– University of Illinois ECE Department

Posted in Patent, Uncategorized

Post navigation

Previous: Journal paper published
Next: Conference paper published

ICORLAB

Email: fleming7@illinois.edu

Go to top