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Research Professor Can Bayram
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Conference paper published

Posted on November 10, 2017December 15, 2018 by fleming7@illinois.edu
“Scaling AlGaN/GaN High Electron Mobility Transistor Structures onto 200-mm Silicon (111) Substrates through Novel Buffer Layer Configurations,” International Conference on Compound Semiconductor Manufacturing Technology, Indian Wells, CA, USA, May 22 – 25, 2017

Posted in Conference Paper, Uncategorized

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