Jaekwon and Zhuoran gave poster talks, titled “Green Light Emitting Diodes for the Ultimate Solid-State Lighting” and “Diamond Semiconductor Devices for Advanced Power Electronics” respectively, at the Compound Semiconductor Week, Ann Arbor, MI, USA, June 1 – 3 (2022).  

“Electronic Surface and Heterostructure: Band Offsets in Ternary Wurtzite and Zincblende III-Nitrides,” Proc. SPIE 11686, 116862C (2021).

“First–Principles Calculations of N- and P-type Doping in Wurtzite and Zincblende GaN,” Proc. SPIE 11687, 116870X (2021).

Listen U of I UG researchers (including ICORLAB’s Nisha) present virtually at The Grainger College of Engineering Illinois Scholars Undergraduate Research (ISUR) Expo 2020. Thanks to DaRin Butz Foundation Research Scholarship for supporting Nisha. You can read more at I-STEM. 

“Physics of failure in near-terahertz III-nitride devices operating in extreme environments,” 5G Enabled Energy Innovation Workshop (5GEEIW), Office of Science, U.S. Department of Energy, Chicago, IL, USA, March 10 – 12 (2020). PDF

“Energy-efficient, harsh environment compatible electronics based on diamond,” 5G Enabled Energy Innovation Workshop (5GEEIW), Office of Science, U.S. Department of Energy, Chicago, IL, USA, March 10 – 12 (2020). PDF

“Single Crystal Diamond: An Ultimate Semiconductor,” 5G Enabled Energy Innovation Workshop (5GEEIW), Office of Science, U.S. Department of Energy, Chicago, IL, USA, March 10 – 12 (2020). PDF

“Suppression of indium clustering and quantum confined stark effect of InGaN LED on silicon (111),” Proc. SPIE 10918, 1091822 (2019).

“Novel cubic phase III-nitride complementary metal-oxide-semiconductor transistor technology,” Proc. SPIE 10540, 105401G (2018)

“A Novel Thin-film Blue Light Emitting Diode via GaN-on-Graphene Technology,” IEEE Photonics Conference, Page(s): 35 – 36, FL, USA, Oct. 1-5, 2017.