“Group III nitride integration with CMOS technology,” U.S. Patent 9,362,281, issued June 7, 2016
Category: Patent
US patent issued
“Group III nitride integration with CMOS technology,” U.S. Patent 9,331,076, issued May 3, 2016
US patent issued
“Engineered base substrates for releasing III-V epitaxy through spalling,” U.S. Patent 9,245,747, issued January 26, 2016
US patent issued
“Laser-initiated exfoliation of group iii-nitride films and applications for layer transfer and patterning,” U.S. Patent 9,236,271, issued January 12, 2016
US patent issued
“Selective gallium nitride regrowth on (100) silicon,” U.S. Patent 9,099,381, issued August 4, 2015
US patent issued
“Selective gallium nitride regrowth on (100) silicon,” U.S. Patent 9,059,075, issued June 16, 2015
US patent issued
“Light emitting diodes with via contact scheme,” U.S. Patent 9,059,339, issued June 16, 2015
US patent issued
“Controlled spalling of group III nitrides containing an embedded spall releasing plane,” U.S. Patent 9,058,990, issued June 16, 2015
US patent issued
“Heterogeneous integration of group iii nitride on silicon for advanced integrated circuits,” U.S. Patent 9,236,251, issued January 12, 2016
US patent issued
“Dual phase gallium nitride material formation on (100) silicon,” U.S. Patent 9,048,173, issued June 2, 2015