“Confined and Interface Optical Phonon Emission in GaN/InGaN Double Barrier Quantum Well Heterostructures,” PLoS One 14(4): e0214971 (2019).

“Comparison of Structural and Optical Properties of Blue Emitting In0.15Ga0.85N/GaN Multi-Quantum-Well Layers Grown on Sapphire and Silicon Substrates,” AIP Advances 9, 025306 (2019)

“Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure,” Sci. Rep. 8:15947 (2018)

“High internal quantum efficiency ultraviolet emission from phase-transition cubic GaN integrated on nanopatterned Si(100),” ACS Photonics 5 (3), 955–963 (2018) Select Highlights by – Compound Semiconductor – Semiconductor Today – Solid State Technology – Photonics Online – Eurekalert – Phys.org – MNTL – ECE – NSF

“Heterogeneous Integration of GaN Devices on a 200 mm Si(100) Wafer via Scalable CMOS Technology,” IEEE Electron Device Lett. 38 (8), 1094 – 1096 (2017) Select Highlights by – Semiconductor Today

“Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model,” J. Appl. Phys. 121, 245109 (2017)

“Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation,” J. Phys. D-Appl. Phys. 50, 265104 (2017)

“Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations,” Sci. Rep. 6:37588 (2016) Select Highlights by – Micro and Nanotechnology Laboratory – ECE Department – University of Illinois – Science Daily – Eurek Alert – Compound Semiconductor – Semiconductor Today – R&D Magazine – CompoundSemi – […]

“Investigation of Structural, Optical, and Electrical Characteristics of an AlGaN/GaN High Electron Mobility Transistor Structure across a 200 mm Si (111) Substrate,” J. Phys. D: Appl. Phys. 50, 055103 (2017).