Dicky defended his doctoral thesis on March 30th, 11:00 am.
Dicky will be responsible of exploring reliability of GaN electronics and III-V infrared sensors (as an alternative to MCT) for space applications. His team is based at the Los Angeles site.
Congrats to Dr. Richard (Dicky) Liu and thanks to all our sponsors for supporting his research.
ACS Omega selected our work (ACS Omega 5, 3917 – 3923 (2020) as the issue Front Cover.
The cover art illustrates the crystal structure and band alignments of zincblende AlN/GaN/InN heterostructures. The innovative zincblende III-nitrides material system featuring type-I band alignment and polarization-free nature is beneficial to capture both electrons and holes for recombination and has broad emission wavelength ranging from ultraviolet, blue, green, to red spectrum.
Kihoon defended his doctoral thesis on Jan. 17th, 9:30 am in HMNTL 3005.
Kihoon joins Intel as a TCAD SW / Modeling Engineer. He will be responsible of building new models involving device physics, implementing them in TCAD, benchmarking results against experimental results, and using them to support other groups. The job will also give him opportunity to do research in futuristic devices. His team is based at the Hillsboro site and is part of the LTD (Logic Technology Development) group.
Congrats to Dr. Kihoon Park and thanks to all our sponsors for supporting his research.
Hsuan-Ping defended his doctoral thesis successfully on Jan. 16th, 2 pm in HMNTL 3003.
Hsuan-Ping joins Intel as a Transistor/Interconnect Process/Device Development Engineer. He will mainly be responsible for leading scientific research to enable design, definition of transistor/interconnect architecture and high volume manufacturing of products with innovative microprocessors. His team is based at the Hillsboro site.
Congrats to Dr. Hsuan-Ping Lee and thanks to all our sponsors for supporting his research.
Team Cubic LEDs [Graduate Student: Mr. Richard Liu, Advisor: Prof. Can Bayram] invented a method for enabling single-crystal single-phase cubic GaN semiconductors. U of I U.S. Patent 10,027,086 (issued July 17, 2018) lays the foundations for enabling this next phase of III-nitride materials for advanced light emitting diodes and transistors.
Richard will represent U of I as a finalist with our invention on Oct 29-30th in Washington DC in front of the distinguished Hall of Famers.
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