“Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing,” IEEE Trans. Electron Devices 67 (7), 2760 (2020).
“Improving Current on/off Ratio and Subthreshold Swing of Schottky-gate AlGaN/GaN HEMTs By Post-metallization Annealing,” IEEE Trans. Electron Devices 67 (7), 2760 (2020).