“Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations,” Sci. Rep. 6:37588 (2016)

Select Highlights by

– Micro and Nanotechnology Laboratory

– ECE Department

– University of Illinois

– Science Daily

– Eurek Alert

– Compound Semiconductor

– Semiconductor Today

– R&D Magazine

– CompoundSemi

– ElectroIQ

– Physics.org