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Research Professor Can Bayram
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Journal paper published

Posted on January 9, 2017December 15, 2018 by fleming7@illinois.edu

“Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations,” Sci. Rep. 6:37588 (2016)

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Posted in Journal Paper, Uncategorized

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Email: fleming7@illinois.edu

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