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Department of Electrical and Computer Engineering
University of Illinois at Urbana-Champaign
 
  
 
 
 
 

 
 
JOURNAL PAPERS

 

(40)
GRAPHICAL ABSTRACT

K.-T. Lee, C. Bayram, D. Piedra, E. Sprogis, H. Deligianni, B. Krishnan, G. Papasouliotis, A. Paranjpe, E. Aklimi, K. Shepard, W. J. Gallagher, T. Palacios, and D. K. Sadana,

Heterogeneous Integration of GaN Devices on a 200 mm Si(100) Wafer via Scalable CMOS Technology,

IEEE Electron Device Lett. 38 (8) 1094 - 1096 (2017). link or .pdf

(39)
GRAPHICAL ABSTRACT

K. Park, M. A. Stroscio, and C. Bayram,

Investigation of electron mobility and saturation velocity limits in gallium nitride using uniaxial dielectric continuum model,

Journal of Applied Physics 121, 245109 (2017). link or .pdf

(38)
GRAPHICAL ABSTRACT

R. Grady and C. Bayram,

Simulation of zincblende AlGaN/GaN high electron mobility transistors for normally-off operation,

J. Phys. D: Appl. Phys. 50, 265104 (2017). link or .pdf

(37)
GRAPHICAL ABSTRACT

J. Perozek, H.-P. Lee, B. Krishnan, G. Papasouliotis, A. Paranjpe, K. B. Reuter, D. K. Sadana, and C. Bayram,

Investigation of Structural, Optical, and Electrical Characteristics of an AlGaN/GaN High Electron Mobility Transistor Structure across a 200 mm Si (111) Substrate,

J. Phys. D: Appl. Phys. 50, 055103 (2017). link or .pdf

(36)
GRAPHICAL ABSTRACT

H-P Lee, J. Perozek, L. N. D. Rosario, and C. Bayram,

Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations,

Nature Scientific Reports 6: 37588 (2016). link or .pdf

(35)
GRAPHICAL ABSTRACT

K. Park and C. Bayram,

Thermal Resistance Optimization of GaN / Substrate Stacks Considering Thermal Boundary Resistance and Temperature-dependent Thermal Conductivity,

Applied Physics Letters 109, 151904 (2016). link or .pdf

(34)
GRAPHICAL ABSTRACT

R. Liu and C. Bayram,

Maximizing Cubic Phase Gallium Nitride Surface Coverage on Nano-patterned Silicon (100),

Applied Physics Letters 109, 042103 (2016). link or .pdf

(33)
GRAPHICAL ABSTRACT

R. Liu and C. Bayram,

Cathodoluminescence study of luminescence centers in hexagonal and cubic phase GaN hetero-integrated on Si(100),

Journal of Applied Physics 120, 025106 (2016). link or .pdf

(32)
GRAPHICAL ABSTRACT

J. Kim† & C. Bayram†(† equal contribution), H. Park, C.-W. Cheng, C. Dimitrakopoulos, J. A. Ott, K. B. Reuter, S. W. Bedell, and D.K. Sadana,

Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene,

Nature Communications 5: 4836 (2014). link or .pdf

(31)
GRAPHICAL ABSTRACT

(FRONTISPIECE ARTICLE)

C. Bayram, J. Ott, K.-T. Shiu, C.-W. Cheng, Y. Zhu, J. Kim, M. Razeghi, and D.K. Sadana,

Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy,

Advanced Functional Materials 24 (28) 4492 (2014). link or .pdf

(30)
GRAPHICAL ABSTRACT

S. W. Bedell, C. Bayram, K. Fogel, P. Lauro, J. Kiser, J. Ott, Y. Zhu, and D. Sadana,

Vertical Light-Emitting Diode Fabrication by Controlled Spalling,

Applied Physics Express 6 (11), 112301 (2013). link or .pdf

(29)
GRAPHICAL ABSTRACT

(COVER ARTICLE)

D. Shahrjerdi, S. W. Bedell, C.Bayram, C. C. Lubguban, K. Fogel, P. Lauro, J. A. Ott, M. Hopstaken, M. Gayeness, and D. Sadana,

Ultra-Light High-Efficiency Flexible InGaP/(In)GaAs Tandem Solar Cells on Plastic,

Advanced Energy Materials 3 (5), 566–571 (2013). link or .pdf

(28) GRAPHICAL ABSTRACT

Y. Zhang, S. Gautier, C.-Y. Cho, E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, Y. Bai, and M. Razeghi,

Near Miliwatt Power AlGaN-based Ultraviolet Light Emitting Diodes based on Lateral Epitaxial Overgrowth of AlN on Si(111),

Applied Physics Letters 102, 011106 (2013). APL link or .pdf

(27) GRAPHICAL ABSTRACT

(EDITOR'S CHOICE 2012)

(APL TOP 20 MOST DOWNLOADED)

D. Shahrjerdi, S. W. Bedell, C. Ebert, C. Bayram, B. Hekmatshoar, K. Fogel, P. Lauro, M. Gaynes, T. Gokmen, J. Ott, and D. K. Sadana,

High-Efficiency Thin-Film InGaP/InGaAs/Ge Tandem Solar Cells Enabled By Controlled Spalling Technology,

Applied Physics Letters 100, 053901 (2012). APL link or .pdf

(26) GRAPHICAL ABSTRACT

C. Bayram,

High quality AlGaN/GaN superlattices for near- and mid-infrared intersubband transitions,

Journal of Applied Physics 111, 013514 (2012). JAP link or .pdf

(25) GRAPHICAL ABSTRACT

C. Bayram, Z. Vashaei, and M. Razeghi,

Reliability in room-temperature negative differential resistance characteristics of low-aluminium-content AlGaN/GaN double-barrier resonant tunneling diodes,

Applied Physics Letters 97, 181109 (2010). APL link or .pdf

(24) GRAPHICAL ABSTRACT

Z. Vashaei, C. Bayram, P. Lavenus, and M. Razeghi,

Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices,

Applied Physics Letters 97, 121918 (2010). APL link or .pdf

(23) GRAPHICAL ABSTRACT

C. Bayram, Z. Vashaei, and M. Razeghi,

Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes,”

Applied Physics Letters 97, 092104 (2010). APL link or .pdf

(22) GRAPHICAL ABSTRACT

E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi,

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates,

Applied Physics Letters 96, 261107 (2010). APL link or .pdf

(21) GRAPHICAL ABSTRACT

Z. Vashaei, E. Cicek, C. Bayram, R. McClintock, and M. Razeghi,

GaN avalanche photodiodes grown on m-plane freestanding GaN substrate,

Applied Physics Letters 96, 201908 (2010). APL link or .pdf

(20) GRAPHICAL ABSTRACT

Z. Vashaei, C. Bayram and M. Razeghi,

Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature,”

Journal of Applied Physics 107, 083505 (2010). JAP link or .pdf

(19) GRAPHICAL ABSTRACT

C. Bayram, Z. Vashaei, and M. Razeghi,

AlN/GaN double-barrier resonant tunneling diodes grown by metal-organic chemical vapor deposition,”

Applied Physics Letters 96, 042103 (2010). APL link or .pdf

(18) GRAPHICAL ABSTRACT

C. Bayram, N. Péré-Laperne, and M. Razeghi,

Effects of well width and growth temperature on optical and structural characteristics of AlN/GaN superlattices grown by metal-organic chemical vapor deposition,”

Applied Physics Letters 95, 201906 (2009). APL link or .pdf

(17) GRAPHICAL ABSTRACT

N. Péré-Laperne, C. Bayram, L. Nguyen-Thê, R. McClintock, and M. Razeghi,

Tunability of Intersubband absorption from 4.5 to 5.3 µm in a GaN/Al0.2Ga0.8N superlattices grown by metalorganic chemical vapor deposition,

Applied Physics Letters 95, 131109 (2009). APL link or .pdf

(16) GRAPHICAL ABSTRACT

C. Bayram and M. Razeghi,

ULTRAVIOLET DETECTORS: Nitrides push performance of UV photodiodes,

Laser Focus World 45(9), 47-51 (2009). LFW link or .pdf

(15) GRAPHICAL ABSTRACT

C. Bayram, D. Rogers, F. H. Teherani, and M. Razeghi,

Fabrication and Characterization of Novel Hybrid Green LEDs Based on Substituting n-type ZnO for n-type GaN in an Inverted p-n Junction,

Journal of Vacuum Science and Technology B 27 (3), 1784 (2009). JVST B link or .pdf

(14) GRAPHICAL ABSTRACT

V. E. Sandana, D. J. Rogers, F. H. Teherani, R. McClintock, C.Bayram, M. Razeghi, H.-J. Drouhin, M.C. Clochard, V. Sallet, G. Garry, and F. Falyouni,

Comparison of ZnO Nanostructures Grown Using pulsed layer deposition, metalorganic chemical vapor deposition, and physical vapor transport,

Journal of Vacuum Science and Technology B 27 (3), 1678 (2009). JVST B link or .pdf

(13) GRAPHICAL ABSTRACT

C. Bayram, N. Péré-laperne, R. McClintock, B. Fain and M. Razeghi,

Pulsed Metalorganic Chemical Vapor Deposition of High Quality AlN/GaN Superlattices for Near-Infrared Intersubband Transitions,

Applied Physics Letters 94, 121902 (2009). APL link or .pdf

(12) GRAPHICAL ABSTRACT

C. Bayram and M. Razeghi,

Stranski-Krastanov growth of InGaN quantum dots emitting in green spectra,

Applied Physics A 96, 403 (2009). AP A link or .pdf

(11) GRAPHICAL ABSTRACT

C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi,

Comprehensive study of blue and green multi-quantum-well light emitting diodes grown on conventional and lateral epitaxial overgrowth GaN,

Applied Physics B 95, 307 (2009). AP B link or .pdf

(10) GRAPHICAL ABSTRACT

J. L. Pau, C. Bayram, P. Giedraitis, R. McClintock, and M. Razeghi,

GaN nanostructured p-i-n photodiodes,

Applied Physics Letters 93, 221104 (2008). APL link or .pdf

(9)
GRAPHICAL ABSTRACT

C. Bayram, J. L. Pau, R. McClintock, M. Razeghi, M. P. Ulmer, and D. Silversmith,

High Quantum Efficiency Back-illuminated GaN Avalanche Photodiodes,

Applied Physics Letters 93, 211107 (2008). APL link or .pdf

(8)
GRAPHICAL ABSTRACT

(APL TOP 20 MOST DOWNLOADED)

C. Bayram, F. H. Teherani, D. Rogers, and M. Razeghi,

A hybrid green light-emitting diode comprised of n-ZnO/(InGaN/GaN) multi-quantum wells/p-GaN,”

Applied Physics Letters 93, 081111 (2008). APL link or .pdf

(7)
GRAPHICAL ABSTRACT

C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi,

Performance enhancement of GaN ultraviolet avalanche photodiodes with p-type delta-doping,”

Applied Physics Letters 92, 241103 (2008). APL link or .pdf

(6)
GRAPHICAL ABSTRACT

C. Bayram, J. L. Pau, R. McClintock, and M. Razeghi,

Delta-doping optimization for high quality p-type GaN,”

Journal of Applied Physics 104, 083512 (2008). JAP link or .pdf

(5)
GRAPHICAL ABSTRACT

J. L. Pau, C. Bayram, R. McClintock, D. Silversmith, and M. Razeghi,

Back-illuminated separate absorption and multiplication GaN avalanche photodiodes,”

Applied Physics Letters 92, 101120 (2008). APL link or .pdf

(4)
GRAPHICAL ABSTRACT

J. L. Pau, R. McClintock, C. Bayram, K. Minder, D. Silversmith, and M. Razeghi,

High Optical Response in Forward Biased (In,Ga)N-GaN MultiquantumWell Diodes under Barrier Illumination,”

IEEE Journal of Quantum Electronics 44, 346 (2008). IEEE link or .pdf

(3)
GRAPHICAL ABSTRACT

K. Minder, J. L. Pau, R. McClintock, P. Kung, C. Bayram, M. Razeghi, and D. Silversmith,

Scaling in GaN avalanche photodiodes designed for back-illumination,”

Applied Physics Letters 91, 073513 (2007). APL link or .pdf

(2)
GRAPHICAL ABSTRACT

J. L. Pau, R. McClintock, K. Minder, C. Bayram, P. Kung, M. Razeghi, E. Munoz, and D. Silversmith,

Gieger-mode operation of back-illuminted GaN avalanche photodiodes,”

Applied Physics Letters 91, 041104 (2007). APL link or .pdf

(1)
GRAPHICAL ABSTRACT

R. McClintock, J. L. Pau, K. Minder, C. Bayram, P. Kung, and M. Razeghi,

Hole-initiated multiplication in back-illuminated GaN avalanche photodiodes,”

Applied Physics Letters 90, 141112 (2007). APL link or .pdf

 

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